HAT2175H - Renesas Technology

HAT2175H Silicon N-Channel MOSFET

HAT2175H Silicon N Channel Power MOS FET Power Switching Features • Capable of 8 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 33 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PTZZ0005DA-A) (Package name: LFPAK ) 5 1 234 5 D 4 G SSS 123 REJ03G0006-0400 Rev.4.00 Sep 20, 2005 1, 2, 3 Source 4 Gate 5 Drain .

Features

• Capable of 8 V gate drive
• Low drive current
• High density mounting
• Low on-resistance RDS(on) = 33 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PTZZ0005DA-A) (Package name: LFPAK ) 5 1 234 5 D 4 G SSS 123 REJ03G0006-0400 Rev.4.00 Sep 20, 2005 1, 2, 3 Source 4 Gate 5 Drain Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty c.