HAT2105T - Renesas Technology

HAT2105T Silicon N-Channel MOSFET

HAT2105T Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • Capable of 4 V gate drive • High density mounting Outline RENESAS Package code: PTSP0008JB-B (Package name: TSSOP-8 ) 87 6 5 123 4 1 8 D D 4 5 G G S3 MOS1 S6 MOS2 REJ03G0384-0200 Rev.2.00 Aug 06, 2007 1, 8 Drain 3, 6 Source 4, 5 Gate 2, 7 NC .

Features

• Low on-resistance
• Capable of 4 V gate drive
• High density mounting Outline RENESAS Package code: PTSP0008JB-B (Package name: TSSOP-8 ) 87 6 5 123 4 1 8 D D 4 5 G G S3 MOS1 S6 MOS2 REJ03G0384-0200 Rev.2.00 Aug 06, 2007 1, 8 Drain 3, 6 Source 4, 5 Gate 2, 7 NC Absolute Maximum Ratings Item Symbol Ratings Drain to source voltage VDSS 200 Gate to source voltage VGSS ±15 Drain current Drain peak current ID 0.5 ID (pulse)Note1 2 Body-drain diode reverse drain current IDR 0.5 Channel dissipation PchNote 2 1 PchNote 3 1.5 Channel temperature Tch 15.