HAT2173N - Renesas Technology

HAT2173N Silicon N-Channel MOSFET

HAT2173N Silicon N Channel Power MOS FET Power Switching Features • Capable of 8 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 12.3 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PTSP0008DC-A (Package name: LFPAK-i) 1(S) 2(S) 3(S) 4(G) 2XXX 8(D) 7(D) 6(D) 5(D) 4 G 5678 DDDD SSS 12 3 REJ03G1684-0100 Rev..

Features

• Capable of 8 V gate drive
• Low drive current
• High density mounting
• Low on-resistance RDS(on) = 12.3 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PTSP0008DC-A (Package name: LFPAK-i) 1(S) 2(S) 3(S) 4(G) 2XXX 8(D) 7(D) 6(D) 5(D) 4 G 5678 DDDD SSS 12 3 REJ03G1684-0100 Rev.1.00 May 28, 2008 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal resistance Channel te.