HAT1069C - Renesas Technology

HAT1069C Silicon P-Channel Power MOSFET

HAT1069C Silicon P Channel Power MOS FET Power Switching REJ03G0164-0300 Rev.3.00 Oct 19, 2007 Features • Low on-resistance RDS(on) = 38 mΩ typ (at VGS = –4.5 V) www.DataSheet4U.com • High speed switching • Capable of 1.8 V gate drive • High density mounting Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Index band 6 5 2 3 4 5 D D D D .

Features

• Low on-resistance RDS(on) = 38 mΩ typ (at VGS =
  –4.5 V) www.DataSheet4U.com
• High speed switching
• Capable of 1.8 V gate drive
• High density mounting Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Index band 6 5 2 3 4 5 D D D D 4 6 G 1. Source 2. Drain 3. Drain 4. Drain 5. Drain 6. Gate 2 1 3 S 1 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)Note1 IDR PchNote2 Tc.