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HAT1020R |
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| Part Number | HAT1020R |
| Manufacturer | Hitachi Semiconductor |
| Description | HAT1020R Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-435 H (Z) 9th. Edition February 1999 Features • • • • Low on-resistance Capable of 4 V gate drive Low drive current High de... |
| Features |
• • • • Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SOP –8 8 5 7 6 5 6 7 8 D D D D 3 1 2 4 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 HAT1020R Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings – 30 ± 20 –5 – 40 –5 Unit V V A A A W °C °C Body –drain diode reverse drain current I DR Channel dissipation Channel temperature Storage temperature Note: Pch Tch Tstg Note2 2.5 150 –55 to +150 1. PW ≤ 10 µs, duty cycle ... |
| Document |
 HAT1020R Data Sheet
PDF 55.17KB |
| Distributor | Stock | Price | Buy |
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| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | HAT1020R |
Renesas |
Silicon P-Channel Power MOSFET |
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| 2 | HAT1021R |
Hitachi Semiconductor |
Silicon P-Channel Power MOSFET |
|
| 3 | HAT1021R |
Renesas |
Silicon P-Channel Power MOSFET |
|
| 4 | HAT1023R |
Hitachi Semiconductor |
Silicon P-Channel Power MOSFET |
|
| 5 | HAT1023R |
Renesas |
Silicon P-Channel Power MOSFET |
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