H7N0607DL, H7N0607DS Silicon N Channel MOS FET High Speed Power Switching REJ03G0124-0300 Rev.3.00 Jan.27.2005 Features • Low on-resistance RDS(on) = 26 mΩ typ. www.DataSheet4U.com • Low drive current. • Capable of 4.5 V gate drive Outline PRSS0004ZD-B PRSS0004ZD-C (Previous code: DPAK(L)-2) (Previous code: DPAK-(S)) D 4 4 G 1 2 S 1 2 3 3 1. Gate 2. Drai.
• Low on-resistance RDS(on) = 26 mΩ typ. www.DataSheet4U.com
• Low drive current.
• Capable of 4.5 V gate drive
Outline
PRSS0004ZD-B PRSS0004ZD-C (Previous code: DPAK(L)-2) (Previous code: DPAK-(S))
D 4 4
G 1 2 S 1 2 3 3
1. Gate 2. Drain 3. Source 4. Drain
H7N0607DS
H7N0607DL
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Tc = 25°C 3. Value a.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | H7N0607DL |
Renesas Technology |
Silicon N-Channel MOSFET | |
2 | H7N0602AB |
Renesas Technology |
Silicon N-Channel MOSFET | |
3 | H7N0602LD |
Renesas Technology |
Silicon N-Channel MOSFET | |
4 | H7N0602LM |
Renesas Technology |
Silicon N-Channel MOSFET | |
5 | H7N0602LS |
Renesas Technology |
Silicon N-Channel MOSFET | |
6 | H7N0603DL |
Renesas Technology |
Silicon N-Channel MOSFET | |
7 | H7N0603DS |
Renesas Technology |
Silicon N-Channel MOSFET | |
8 | H7N0608AB |
Renesas Technology |
Silicon N-Channel MOSFET | |
9 | H7N0608FM |
Renesas Technology |
Silicon N-Channel MOSFET | |
10 | H7N0608L |
Renesas Technology |
Silicon N-Channel MOSFET | |
11 | H7N0608LD |
Renesas Technology |
Silicon N-Channel MOSFET | |
12 | H7N0608LM |
Renesas Technology |
Silicon N-Channel MOSFET |