H7N0602LS - Renesas Technology

H7N0602LS Silicon N-Channel MOSFET

H7N0602LD, H7N0602LS, H7N0602LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1130-0600 Rev.6.00 Oct 16, 2006 Features • Low on-resistance RDS (on) = 4.1 mΩ typ. www.DataSheet4U.com • 4.5 V gate drive devices • High Speed Switching Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 4 1. Gate 2. Drain 3. Source 4. Drain 1 1.

Features

• Low on-resistance RDS (on) = 4.1 mΩ typ. www.DataSheet4U.com
• 4.5 V gate drive devices
• High Speed Switching Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 4 1. Gate 2. Drain 3. Source 4. Drain 1 1 2 3 2 3 RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) H7N0602LD H7N0602LS RENESAS Package code: PRSS0004AE-C (Package name: LDPAK (S)-(2) ) 4 G D 1 2 3 S H7N0602LM Rev.6.00 Oct 16, 2006 page 1 of 8 H7N0602LD, H7N0602LS, H7N0602LM Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain .