H7N0608AB - Renesas Technology

H7N0608AB Silicon N-Channel MOSFET

H7N0608AB Silicon N Channel MOS FET High Speed Power Switching REJ03G0143-0100Z Rev.1.00 Oct.30.2003 www.DataSheet4U.com Features • Low on-resistance RDS(on) = 6.0 mΩ typ. • Low drive current • Available for 4.5 V gate drive Outline TO-220AB D G S 1 2 3 1. Gate 2. Drain (Flange) 3. Source Rev.1.00, Oct.30.2003, page 1 of 9 H7N0608AB Absolute Maximu.

Features

• Low on-resistance RDS(on) = 6.0 mΩ typ.
• Low drive current
• Available for 4.5 V gate drive Outline TO-220AB D G S 1 2 3 1. Gate 2. Drain (Flange) 3. Source Rev.1.00, Oct.30.2003, page 1 of 9 H7N0608AB Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current www.DataSheet4U.com Symbol VDSS VGSS ID ID (pulse) IDR IAP Note3 Note1 Ratings 60 ±20 70 280 70 40 137 80 150
  –55 to +150 Unit V V A A A A mJ W °C °C Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperat.