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The H2N5401 is designed for general purpose applications requiring high breakdown voltages. Features • Complements to NPN Type H2N5551 • High Collector-Emitter Breakdown Voltage (VCEO=150V (@IC=1mA)) TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ..........
• Complements to NPN Type H2N5551
• High Collector-Emitter Breakdown Voltage (VCEO=150V (@IC=1mA))
TO-92
Absolute Maximum Ratings
• Maximum Temperatures Storage Temperature .... -55 ~ +150 °C Junction Temperature ... +150 °C Maximum
• Maximum Power Dissipation Total Power Dissipation (TA=25°C) ...
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | H2N5087 |
Hi-Sincerity Mocroelectronics |
PNP EPITAXIAL PLANAR TRANSISTOR |
|
| 2 | H2N5088 |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR |
|
| 3 | H2N5089 |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR |
|
| 4 | H2N5366 |
Hi-Sincerity Mocroelectronics |
PNP EPITAXIAL PLANAR TRANSISTOR |
|
| 5 | H2N5551 |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR |
|
| 6 | H2N3417 |
Hi-Sincerity Mocroelectronics |
NPN SILICON TRANSISTOR |
|
| 7 | H2N3904 |
Hi-Sincerity Mocroelectronics |
PNP EPITAXIAL PLANAR TRANSISTOR |
|
| 8 | H2N3906 |
Hi-Sincerity Mocroelectronics |
PNP EPITAXIAL PLANAR TRANSISTOR |
|
| 9 | H2N4124 |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR |
|
| 10 | H2N4126 |
Hi-Sincerity Mocroelectronics |
PNP EPITAXIAL PLANAR TRANSISTOR |
|
| 11 | H2N4401 |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR |
|
| 12 | H2N4403 |
Hi-Sincerity Mocroelectronics |
PNP EPITAXIAL PLANAR TRANSISTOR |
|