This device was designed for low noise,high gain,general purpose amplifier applications for 1uA to 25mA collector current. Absolute Maximum Ratings TO-92 • Maximum Temperatures Storage Temperature ... -55 ~ +150 °C Junction Temperature .
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | H2N5088 |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR | |
2 | H2N5089 |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR | |
3 | H2N5366 |
Hi-Sincerity Mocroelectronics |
PNP EPITAXIAL PLANAR TRANSISTOR | |
4 | H2N5401 |
Hi-Sincerity Mocroelectronics |
PNP EPITAXIAL PLANAR TRANSISTOR | |
5 | H2N5551 |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR | |
6 | H2N3417 |
Hi-Sincerity Mocroelectronics |
NPN SILICON TRANSISTOR | |
7 | H2N3904 |
Hi-Sincerity Mocroelectronics |
PNP EPITAXIAL PLANAR TRANSISTOR | |
8 | H2N3906 |
Hi-Sincerity Mocroelectronics |
PNP EPITAXIAL PLANAR TRANSISTOR | |
9 | H2N4124 |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR | |
10 | H2N4126 |
Hi-Sincerity Mocroelectronics |
PNP EPITAXIAL PLANAR TRANSISTOR | |
11 | H2N4401 |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR | |
12 | H2N4403 |
Hi-Sincerity Mocroelectronics |
PNP EPITAXIAL PLANAR TRANSISTOR |