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The H2N4126 is designed for general purpose switching and amplifier applications. Features • Complementary to H2N4124 • High Power PT: 625mW at 25°C • High DC Current Gain hFE: 120-360 at IC=2mA TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ..............
• Complementary to H2N4124
• High Power PT: 625mW at 25°C
• High DC Current Gain hFE: 120-360 at IC=2mA
TO-92
Absolute Maximum Ratings
• Maximum Temperatures Storage Temperature .... -55 ~ +150 °C Junction Temperature ... +150 °C Maximum
• Maximum Power Dissipation Total Power Dissipation (TA=25°C) .....
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | H2N4124 |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR |
|
| 2 | H2N4401 |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR |
|
| 3 | H2N4403 |
Hi-Sincerity Mocroelectronics |
PNP EPITAXIAL PLANAR TRANSISTOR |
|
| 4 | H2N3417 |
Hi-Sincerity Mocroelectronics |
NPN SILICON TRANSISTOR |
|
| 5 | H2N3904 |
Hi-Sincerity Mocroelectronics |
PNP EPITAXIAL PLANAR TRANSISTOR |
|
| 6 | H2N3906 |
Hi-Sincerity Mocroelectronics |
PNP EPITAXIAL PLANAR TRANSISTOR |
|
| 7 | H2N5087 |
Hi-Sincerity Mocroelectronics |
PNP EPITAXIAL PLANAR TRANSISTOR |
|
| 8 | H2N5088 |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR |
|
| 9 | H2N5089 |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR |
|
| 10 | H2N5366 |
Hi-Sincerity Mocroelectronics |
PNP EPITAXIAL PLANAR TRANSISTOR |
|
| 11 | H2N5401 |
Hi-Sincerity Mocroelectronics |
PNP EPITAXIAL PLANAR TRANSISTOR |
|
| 12 | H2N5551 |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR |
|