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of CE# 0.6 Change Endurance Change AC Timing Characteristics (tRC, tRP, tWC, tWP, tCLS, tCS, tALS, tDS, tREA, tADL) Update Read ID table (3rd Byte) Change Bad Block Management Dec. 14. 2009 Preliminary Sep. 21. 2009 Oct. 5. 2009 Preliminary Preliminary Aug. 31. 2009 Preliminary History Draft Date May. 22. 2009 Jun. 17. 2009 Jul. 16. 2009 Remark Preliminar.
tREA, tADL) Update Read ID table (3rd Byte) Change Bad Block Management Dec. 14. 2009 Preliminary Sep. 21. 2009 Oct. 5. 2009 Preliminary Preliminary Aug. 31. 2009 Preliminary
History
Draft Date
May. 22. 2009 Jun. 17. 2009 Jul. 16. 2009
Remark
Preliminary Preliminary Preliminary
Rev 0.6 / Dec. 2009
2
Preliminary H27UBG8T2A Series 32Gb (4096M x 8bit) NAND Flash
Product Feature
■
Multilevel Cell technology
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Endurance - 3,000 P/E cycles (with 24 bit/ 1,024byte ECC)
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Supply Voltage - 3.3V device : Vcc = 2.7 V ~ 3.6 V Vcc = 2.7 V ~ 3.6 V
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Data Retention - 10 Years
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Organization -.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | H27UBG8T2BTR-BC |
Hynix |
32Gb(4096M x 8bit) Legacy MLC NAND Flash |
|
| 2 | H27UBG8T2CTR-BC |
Hynix Semiconductor |
32Gb(4096M x 8bit) Legacy MLC NAND Flash |
|
| 3 | H27U1G8F2B |
Hynix |
1 Gbit (128 M x 8 bit) NAND Flash |
|
| 4 | H27U2G6F2C |
Hynix |
2Gb NAND FLASH |
|
| 5 | H27U2G8F2C |
Hynix |
2Gb NAND FLASH |
|
| 6 | H27U2G8F2CTR |
Hynix |
2Gb NAND FLASH |
|
| 7 | H27U4G6F2D |
Hynix |
4 Gbit (512M x 8 bit) NAND Flash |
|
| 8 | H27U4G8F2D |
Hynix |
4 Gbit (512M x 8 bit) NAND Flash |
|
| 9 | H27U518S2C |
Hynix |
512 Mbit (64 M x 8 bit) NAND Flash |
|
| 10 | H27U8G8T2B |
Hynix |
8 Gbit (1024 M x 8 bit) NAND Flash Memory |
|
| 11 | H27UAG8T2A |
Hynix |
16 Gbit (2048 M x 8 bit) NAND Flash |
|
| 12 | H27UAG8T2B |
Hynix |
16Gb (2048M x 8bit) NAND Flash |
|