H27UAG8T2A - Hynix

H27UAG8T2A 16 Gbit (2048 M x 8 bit) NAND Flash

and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 0.5 / Jul. 2009 1 1 Preliminary H27UAG8T2A Series 16 Gbit (2048 M x 8 bit) NAND Flash Document Title 16 Gbit (2048 M x 8 bit) NAND Flash Memory Revision History Revisio n No. 0.0 0.1 0.2 Initial Draft. Deleted.

Features

SUMMARY ELECTRONIC SIGNATURE HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications - 1st cycle : Manufacturer Code - 2nd cycle : Device Code - 3rd cycle : Internal chip number, Cell Type, Number of Simultaneously Programmed Pages. - 4th cycle : Page size, Block size, Organization, Spare size - 5th cycle : Multiplane Information - 6th cycle : Technology (Design Rule), EDO, Interface MULTIPLANE ARCHITECTURE - Array is split into two independent planes. Parallel operations on both planes are available, halving program, read and erase time. NAND INTERFACE - x8.