H27U518S2C - Hynix

H27U518S2C 512 Mbit (64 M x 8 bit) NAND Flash

and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 1.0 / Dec. 2008 1 1PrePreliminaryeee H27U518S2C Series 512 Mbit (64 M x 8 bit) NAND Flash Document Title 512 Mbit (64 M × 8 bit ) NAND Flash Memory Revision History Revision No. 0.0 0.1 1.0 Initial Draft Corr.

Features

SUMMARY HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications ELECTRONIC SIGNATURE - 1st cycle : Manufacturer Code - 2nd cycle : Device Code NAND INTERFACE - x8 bus width - Address/ Data Multiplexing - Pinout compatiblity for all densities CHIP ENABLE DON’T CARE - Simple interface with microcontroller SUPPLY VOLTAGE - 3.3 V device : Vcc = 2.7 V ~ 3.6 V HARDWARE DATA PROTECTION - Program/Erase locked during Power transitions. MEMORY CELL ARRAY - (512 + 16) bytes x 32 pages x 4096 blocks DATA RETENTION - 100,000 Program/Erase cycles (with 1bit/528byte E.