GW39NC60VD - ST Microelectronics

GW39NC60VD N-CHANNEL IGBT

This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behaviour. Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking GW39NC60VD Package TO-247 Packaging Tube STGW39NC60VD January 2008 Rev 7 1/15 www.st.com 15 Datasheet pdf - http://www.DataSheet.

Features

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■ Low CRES / CIES ratio (no cross conduction susceptibility) IGBT co-packaged with ultra fast free-wheeling diode 2 1 3 Applications
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■ High frequency inverters UPS Motor drivers Induction heating TO-247 Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behaviour. Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking GW39NC60VD Package TO-247 Packaging Tube STGW39NC60VD January 2008 Rev 7 1/15 www.st.com 15 Datasheet pdf - http://www.DataSheet4U.net/ www.