GW100N30 - STMicroelectronics

GW100N30 IGBT

duAdvanced high-density and high-current IGBT rotechnology with low-drop companion diode Padapted to various functions in PDP sets. 3 2 1 TO-220 Figure 1. Internal schematic diagram lete Product(s) - ObsoleteTable 1. Device summary soOrder codes Ob STGF100N30 Marking GF100N30 Package TO-220FP Packaging Tube STGP100N30 GP100N30 TO-220 Tube STGW100N3.

Features

■ Optimized for sustain and energy recovery circuits in PDP applications.
■ State-of-the-art STripFET™ technology
■ Peak collector current IRP = 330 A @ TC = 25 °C (see Table 2) 3 2 1 TO-220FP 3 2 1 TO-247
■ Very low-on voltage drop (VCE(sat)) and energy per pulse for improved panel efficiency )
■ High repetitive peak current capability ct(sDescription duAdvanced high-density and high-current IGBT rotechnology with low-drop companion diode Padapted to various functions in PDP sets. 3 2 1 TO-220 Figure 1. Internal schematic diagram lete Product(s) - ObsoleteTable 1. Device summary soOrde.