This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise E (3) between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(sat) temperature coefficient and very tight.
• Maximum junction temperature: TJ = 175 °C
• Tail-less switching off
• VCE(sat) = 1.85 V (typ.) @ IC = 30 A
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance
• Very fast soft recovery antiparallel diode
Applications
• Photovoltaic inverters
• Uninterruptible power supply
• Welding
• Power factor correction
• Very high frequency converters
G (1) Description
This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise E (3) between conduction and swi.
This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | GW30N120KD |
STMicroelectronics |
short circuit rugged IGBT | |
2 | GW30NC120HD |
STMicroelectronics |
STGW30NC120HD | |
3 | GW30NC60W |
STMicroelectronics |
IGBT | |
4 | GW30NC60WD |
STMicroelectronics |
ultra fast IGBT | |
5 | GW3231 |
WINKOO |
H-bridge DC motor drive | |
6 | GW35HF60W |
STMicroelectronics |
Ultrafast IGBT | |
7 | GW3887A |
Conexant |
Wireless LAN Integrated Medium Access Controller | |
8 | GW38IH130D |
STMicroelectronics |
very fast IGBT | |
9 | GW39NC60VD |
ST Microelectronics |
N-CHANNEL IGBT | |
10 | GW100L |
smart RF |
RF Modem | |
11 | GW100N30 |
STMicroelectronics |
IGBT | |
12 | GW128x32C-K610A |
NORITAKE ITRON |
VFD Module |