GSMDC2305Z - Globaltech

GSMDC2305Z P-Channel MOSFET

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching.

Features

„ -20V, -26A, RDS(ON)=15mΩ@VGS=-4.5V „ Improved dv/dt capability „ Fast switching „ Suit for -1.8V Gate Drive Applications „ Green Device Available „ DFN3X3-8L package design Applications „ Notebook „ Load Switch „ Networking „ Hand-Held Instruments Packages & Pin Assignments GSMDC2305ZFF (DFN3X3-8L) GSMDC2305Z Top View Pin Description 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain www.gs-power.com 1 Ordering Information GS P/N GSMDC2305Z F F Package Code Pb Free Code Part Number GSMDC2305ZFF Package DFN3X3-8L Mark.