GSMDC3801R - Globaltech

GSMDC3801R N-Channel Power MOSFET

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching.

Features

„ 30V, 55A, RDS(ON)=9mΩ@VGS=10V (Q1) „ 30V, 80A, RDS(ON)=6mΩ@VGS=10V (Q2) „ Improved dv/dt capability „ Fast switching „ 100% EAS guaranteed „ Green Device Available „ DFN5X6-8L package design Applications „ MB / VGA / Vcore „ POL Buck Applications „ SMPS 2nd SR Packages & Pin Assignments GSMDC3801RFF (DFN5X6-8L) GSMDC3801R Bottom View Pin Description 1 Gate 1 2 Drain 1 3 Drain 1 4 Drain 1 5 Source 2 6 Source 2 7 Source 2 8 Gate 2 www.gs-power.com 1 Ordering Information GS P/N GSMDC3801R F F Package Code Pb Free Code Part Number GSMDC3.