GSMDC3812V - Globaltech

GSMDC3812V Dual N-Channel MOSFET

These Dual N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast swit.

Features

„ 30V, 20A, RDS(ON)=20mΩ@VGS=10V „ Improved dv/dt capability „ Fast switching „ 100% EAS guaranteed „ Green Device Available „ DFN3X3-8L package design Applications „ MB / VGA / Vcore „ POL Applications „ SMPS 2nd SR „ Li-Battery Protection Packages & Pin Assignments GSMDC3812VFF (DFN3X3-8L) GSMDC3812V Top View Pin Description 1 Source 1 2 Gate 1 3 Source 2 4 Gate 2 5 Drain 2 6 Drain 2 7 Drain 1 8 Drain 1 www.gs-power.com 1 Ordering Information GS P/N GSMDC3812V F F Package Code Pb Free Code Part Number GSMDC3812VFF Package DF.