GSMD35N15 - Globaltech

GSMD35N15 N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching.

Features

„ 150V, 35A, RDS(ON)=46mΩ@VGS=10V „ Improved dv/dt capability „ Fast switching „ VGS Guaranteed ±25V „ Green Device Available „ TO-252-2L package design Applications „ Motor Drive „ DC-DC Switching „ LED Applications „ Power Tools Packages & Pin Assignments GSMD35N15DF (TO-252-2L) Top View Description Gate Source Drain GSMD35N15 www.gs-power.com 1 Ordering Information GS P/N GSMD35N15 D F Package Code Pb Free Code Part Number GSMD35N15DF Marking Information Package TO-252-2L Quantity Reel 2500 PCS Absolute Maximum Ratings TA=25ºC .