GSMBTA64 - GTM

GSMBTA64 TRANSISTOR

Features PNP SILICON TRANSISTOR The GSMBTA64 is designed for application requiring extremely high current gain at collector to 500mA. High D.C. Current Gain Complementary to GSMBTA14 Package Dimensions REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.1.

Features

PNP SILICON TRANSISTOR The GSMBTA64 is designed for application requiring extremely high current gain at collector to 500mA. High D.C. Current Gain Complementary to GSMBTA14 Package Dimensions REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC. Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissi.