GSMBTA13 - GTM

GSMBTA13 TRANSISTOR

Package Dimensions NP N EP ITAX I AL PL ANAR T RANSI STOR The GSMBTA13 is designed for Darlington amplifier applications. REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC. Absolute Maximum Ratings at Ta = .

Features

50 30 30 10 500 225 Unit V V V mA mW Electrical Characteristics (Ta = 25 Symbol BVCBO BVCEO BVEBO ICBO IEBO
*VCE(sat)
*VBE(on)
*hFE1
*hFE2 fT Cob Min. 30 30 10 5K 10K 125 Typ. - Test Conditions GSMBTA13 Page: 1/2 ISSUED DATE :2005/08/31 REVISED DATE :2006/05/10B Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or s.