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GSMBTA56 - GTM

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GSMBTA56 TRANSISTOR

Package Dimensions PNP SILICON TRANSISTOR The GSMBTA56 is designed for general purpose amplifier applications. REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC. Absolute Maximum Ratings at Ta = 25 Paramete.

Features

V V V mA mW Electrical Characteristics(Ta = 25 Symbol BVCBO BVCEO BVEBO ICBO ICEO
*VCE(sat)
*VBE(on)
*hFE1
*hFE2 fT Min. -80 -80 -4 50 50 100 Typ. - Test Conditions GSMBTA56 Page: 1/2 ISSUED DATE :2005/08/31 REVISED DATE : Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any c.

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