Package Dimensions PNP SILICON TRANSISTOR The GSMBTA56 is designed for general purpose amplifier applications. REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC. Absolute Maximum Ratings at Ta = 25 Paramete.
V V V mA mW
Electrical Characteristics(Ta = 25
Symbol BVCBO BVCEO BVEBO ICBO ICEO
*VCE(sat)
*VBE(on)
*hFE1
*hFE2 fT Min. -80 -80 -4 50 50 100 Typ. -
Test Conditions
GSMBTA56
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ISSUED DATE :2005/08/31 REVISED DATE :
Characteristics Curve
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | GSMBTA05 |
GTM |
TRANSISTOR | |
2 | GSMBTA06 |
GTM |
TRANSISTOR | |
3 | GSMBTA13 |
GTM |
TRANSISTOR | |
4 | GSMBTA14 |
GTM |
TRANSISTOR | |
5 | GSMBTA42 |
GTM |
TRANSISTOR | |
6 | GSMBTA44 |
GTM |
TRANSISTOR | |
7 | GSMBTA64 |
GTM |
TRANSISTOR | |
8 | GSMBTA92 |
GTM |
TRANSISTOR | |
9 | GSMBTA94 |
GTM |
TRANSISTOR | |
10 | GSMBT1015 |
GTM |
TRANSISTOR | |
11 | GSMBT1623 |
GTM |
TRANSISTOR | |
12 | GSMBT1815 |
GTM |
TRANSISTOR |