GS81302TT06/11/20/38E-500/450/400/350 165-Bump BGA Commercial Temp Industrial Temp 144Mb SigmaDDRTM-II+ Burst of 2 SRAM 500 MHz–350 MHz 1.8 V VDD 1.8 V or 1.5 V I/O Features • 2.5 Clock Latency • Simultaneous Read and Write SigmaDDRTM Interface • JEDEC-standard pinout and package • Double Data Rate interface • Byte Write controls sampled at data-in time .
• 2.5 Clock Latency
• Simultaneous Read and Write SigmaDDRTM Interface
• JEDEC-standard pinout and package
• Double Data Rate interface
• Byte Write controls sampled at data-in time
• Burst of 2 Read and Write
• Dual-Range On-Die Termination (ODT) on Data (D), Byte
Write (BW), and Clock (K, K) inputs
• 1.8 V +100/
–100 mV core power supply
• 1.5 V or 1.8 V HSTL Interface
• Pipelined read operation
• Fully coherent read and write pipelines
• ZQ pin for programmable output drive strength
• Data Valid Pin (QVLD) Support
• IEEE 1149.1 JTAG-compliant Boundary Scan
• 165-bump, 15 mm x 17 mm, 1 mm bum.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | GS81302TT110E |
GSI Technology |
144Mb SigmaDDR-II+ Burst of 2 SRAM | |
2 | GS81302TT11GE |
GSI Technology |
144Mb SigmaDDR-II+ Burst of 2 SRAM | |
3 | GS81302TT107E |
GSI Technology |
144Mb SigmaDDR-II+ Burst of 2 SRAM | |
4 | GS81302TT10E |
GSI Technology |
144Mb SigmaDDR-II+ Burst of 2 SRAM | |
5 | GS81302TT10GE |
GSI Technology |
144Mb SigmaDDR-II+ Burst of 2 SRAM | |
6 | GS81302TT19E |
GSI Technology |
144Mb SigmaDDR-II+ Burst of 2 SRAM | |
7 | GS81302TT19GE |
GSI Technology |
144Mb SigmaDDR-II+ Burst of 2 SRAM | |
8 | GS81302TT06E |
GSI Technology |
144Mb SigmaDDR-II+ Burst of 2 SRAM | |
9 | GS81302TT06GE |
GSI Technology |
144Mb SigmaDDR-II+ Burst of 2 SRAM | |
10 | GS81302TT07E |
GSI Technology |
144Mb SigmaDDR-II+ Burst of 2 SRAM | |
11 | GS81302TT07GE |
GSI Technology |
144Mb SigmaDDR-II+ Burst of 2 SRAM | |
12 | GS81302TT20E |
GSI Technology |
144Mb SigmaDDR-II+ Burst of 2 SRAM |