GS81302TT06E - GSI Technology

GS81302TT06E 144Mb SigmaDDR-II+ Burst of 2 SRAM

GS81302TT06/11/20/38E-500/450/400/350 165-Bump BGA Commercial Temp Industrial Temp 144Mb SigmaDDRTM-II+ Burst of 2 SRAM 500 MHz–350 MHz 1.8 V VDD 1.8 V or 1.5 V I/O Features • 2.5 Clock Latency • Simultaneous Read and Write SigmaDDRTM Interface • JEDEC-standard pinout and package • Double Data Rate interface • Byte Write controls sampled at data-in time .

Features

• 2.5 Clock Latency
• Simultaneous Read and Write SigmaDDRTM Interface
• JEDEC-standard pinout and package
• Double Data Rate interface
• Byte Write controls sampled at data-in time
• Burst of 2 Read and Write
• Dual-Range On-Die Termination (ODT) on Data (D), Byte Write (BW), and Clock (K, K) inputs
• 1.8 V +100/
  –100 mV core power supply
• 1.5 V or 1.8 V HSTL Interface
• Pipelined read operation
• Fully coherent read and write pipelines
• ZQ pin for programmable output drive strength
• Data Valid Pin (QVLD) Support
• IEEE 1149.1 JTAG-compliant Boundary Scan
• 165-bump, 15 mm x 17 mm, 1 mm bum.