GS81302TT07E - GSI Technology

GS81302TT07E 144Mb SigmaDDR-II+ Burst of 2 SRAM

Table Symbol Description Type Comments SA Synchronous Address Inputs Input — R/W Synchronous Read Input High: Read Low: Write BW0–BW3 Synchronous Byte Writes Input Active Low LD Synchronous Load Pin Input Active Low K Input Clock Input Active High K Input Clock Input Active Low TMS Test Mode Select Input — TDI Test Data Input Inpu.

Features

• 2.0 Clock Latency
• Simultaneous Read and Write SigmaDDR™ Interface
• Common I/O bus
• JEDEC-standard pinout and package
• Double Data Rate interface
• Byte Write controls sampled at data-in time
• Burst of 2 Read and Write
• Dual-Range On-Die Termination (ODT) on Data (D), Byte Write (BW), and Clock (K, K) inputs
• 1.8 V +100/
  –100 mV core power supply
• 1.5 V or 1.8 V HSTL Interface
• Pipelined read operation with self-timed Late Write
• Fully coherent read and write pipelines
• ZQ pin for programmable output drive strength
• Data Valid pin (QVLD) Support
• IEEE 1149.1 JTAG-compliant Bounda.