The GS-065-060-5-T-A is an Automotive-grade 650 V enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® and GaNPX® packaging. Island Technology® cell layout realizes high-c.
• AEC-Q101 and AutoQual+™ (Enhanced-AEC-Q101)
• 650 V enhancement mode power transistor
• Top-cooled, low inductance GaNPX® package
• RDS(on) = 25 mΩ
• IDS(max) = 60 A
• Ultra-low FOM
• Simple gate drive requirements (0 V to 6 V)
• Transient tolerant gate drive (-20 / +10 V)
• Very high switching frequency (> 10 MHz)
• Fast and controllable fall and rise times
• Reverse conduction capability
• Zero reverse recovery loss
• Small 9 x 7.6 mm2 PCB footprint
• Dual gate pads for optimal board layout
• RoHS 3 (6+4) compliant
Package Outline
top view
Circuit Symbol
The thermal pad is internally co.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | GS-065-060-5-B-A |
GaN Systems |
Automotive 650V GaN E-mode transistor | |
2 | GS-065-004-1-L |
GaN Systems |
650V E-mode GaN transistor | |
3 | GS-065-004-6-L |
GaN Systems |
700V E-mode GaN transistor | |
4 | GS-065-008-1-L |
GaN Systems |
650V E-mode GaN transistor | |
5 | GS-065-008-6-L |
GaN Systems |
700V E-mode GaN transistor | |
6 | GS-065-011-1-L |
GaN Systems |
650V E-mode GaN transistor | |
7 | GS-065-011-2-L |
GaN Systems |
650V E-mode GaN transistor | |
8 | GS-065-011-6-L |
GaN Systems |
700V E-mode GaN transistor | |
9 | GS-065-011-6-LR |
GaN Systems |
700V E-mode GaN transistor | |
10 | GS-065-014-6-L |
GaN Systems |
700V E-mode GaN transistor | |
11 | GS-065-014-6-LR |
GaN Systems |
700V E-mode GaN transistor | |
12 | GS-065-018-2-L |
GaN Systems |
650V E-mode GaN transistor |