The GS-065-014-6-LR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® cell layout which realizes high-current die and high yield. The GS065-014-6-LR is a bottom-s.
• 700 V enhancement mode power transistor
• 850 V transient drain-to-source voltage
• Bottom-cooled, small 8x8 mm PDFN package
• RDS(on) = 95 mΩ
• IDSmax,DC = 15.2 A / IDSmax,Pulse = 25 A
• Ultra-low FOM
• Simple gate drive requirements (0 V to 6 V)
• Transient tolerant gate drive (-20 V / +10 V)
• High switching frequency (> 1 MHz)
• Fast and controllable fall and rise times
• Reverse conduction capability
• Zero reverse recovery loss
• Source Sense (SS) pin for optimized gate drive
• RoHS 3 (6+4) compliant
GS-065-014-6-LR 700 V E-mode GaN transistor
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Applicati.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | GS-065-014-6-L |
GaN Systems |
700V E-mode GaN transistor | |
2 | GS-065-011-1-L |
GaN Systems |
650V E-mode GaN transistor | |
3 | GS-065-011-2-L |
GaN Systems |
650V E-mode GaN transistor | |
4 | GS-065-011-6-L |
GaN Systems |
700V E-mode GaN transistor | |
5 | GS-065-011-6-LR |
GaN Systems |
700V E-mode GaN transistor | |
6 | GS-065-018-2-L |
GaN Systems |
650V E-mode GaN transistor | |
7 | GS-065-004-1-L |
GaN Systems |
650V E-mode GaN transistor | |
8 | GS-065-004-6-L |
GaN Systems |
700V E-mode GaN transistor | |
9 | GS-065-008-1-L |
GaN Systems |
650V E-mode GaN transistor | |
10 | GS-065-008-6-L |
GaN Systems |
700V E-mode GaN transistor | |
11 | GS-065-030-2-L |
GaN Systems |
650V E-mode GaN transistor | |
12 | GS-065-030-6-LL |
GaN Systems |
700V E-mode GaN transistor |