GS-065-060-5-T-A |
Part Number | GS-065-060-5-T-A |
Manufacturer | GaN Systems |
Description | The GS-065-060-5-T-A is an Automotive-grade 650 V enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. G... |
Features |
• AEC-Q101 and AutoQual+™ (Enhanced-AEC-Q101) • 650 V enhancement mode power transistor • Top-cooled, low inductance GaNPX® package • RDS(on) = 25 mΩ • IDS(max) = 60 A • Ultra-low FOM • Simple gate drive requirements (0 V to 6 V) • Transient tolerant gate drive (-20 / +10 V) • Very high switching frequency (> 10 MHz) • Fast and controllable fall and rise times • Reverse conduction capability • Zero reverse recovery loss • Small 9 x 7.6 mm2 PCB footprint • Dual gate pads for optimal board layout • RoHS 3 (6+4) compliant Package Outline top view Circuit Symbol The thermal pad is internally co... |
Document |
GS-065-060-5-T-A Data Sheet
PDF 1.01MB |
Distributor | Stock | Price | Buy |
---|
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | GS-065-060-5-B-A |
GaN Systems |
Automotive 650V GaN E-mode transistor | |
2 | GS-065-004-1-L |
GaN Systems |
650V E-mode GaN transistor | |
3 | GS-065-004-6-L |
GaN Systems |
700V E-mode GaN transistor | |
4 | GS-065-008-1-L |
GaN Systems |
650V E-mode GaN transistor | |
5 | GS-065-008-6-L |
GaN Systems |
700V E-mode GaN transistor |