GN1010 - Panasonic Semiconductor

GN1010 GaAs N-Channel MES IC

GaAs MMICs GN1010 GN1010 GaAs N-Channel MES IC For high-output high-gain amplification 0.65±0.15 Unit : mm 2.8 –0.3 +0.2 +0.2 1.5 –0.3 0.65±0.15 s Features 0.95 q q q General-use wide-band amplifier 2.9±0.2 0.5R 1.9±0.2 4 1 0.95 Low noise With bandwidth control pin 3 2 1.1 –0.1 s Absolute Maximum Ratings (Ta = 25˚C) Parameter Power supply vo.

Features

0.95 q q q General-use wide-band amplifier 2.9±0.2 0.5R 1.9±0.2 4 1 0.95 Low noise With bandwidth control pin 3 2 1.1
  –0.1 s Absolute Maximum Ratings (Ta = 25˚C) Parameter Power supply voltage Drain current Gate current Allowable power dissipation Channel temperature Storage temperature Symbol VDS VGS ID IG PD Tch Tstg Rating 6
  –4 45 3 200 150
  – 55 to +150 Unit V V mA mA mW ˚C ˚C 1 : Source 2 : Drain 3:C 4 : Gate Mini Type Package (4-pin) s Equivalent Circuit 2 3 4 0 to 0.1 0.4±0.2 0.8 1 s Electrical Characteristics (Ta = 25˚C) Parameter Drain current Noise figure Power gain .