GN1A - GN13 PRV : 50 - 1000 Volts Io : 1.0 Ampere FEATURES : * * * * * Glass passivated chip High current capability High reliability Low reverse current Low forward voltage drop GLASS PASSIVATED JUNCTION SILICON SURFACE MOUNT SMA (DO-214AC) 1.1 ± 0.3 5.0 ± 0.15 4.5 ± 0.15 1.2 ± 0.2 2.6 ± 0.15 2.1 ± 0.2 0.2 ± 0.07 MECHANICAL DATA : * * * * * * Case : SM.
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* Glass passivated chip High current capability High reliability Low reverse current Low forward voltage drop
GLASS PASSIVATED JUNCTION SILICON SURFACE MOUNT
SMA (DO-214AC)
1.1 ± 0.3 5.0 ± 0.15 4.5 ± 0.15
1.2 ± 0.2 2.6 ± 0.15 2.1 ± 0.2
0.2 ± 0.07
MECHANICAL DATA :
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* Case : SMA Molded plastic Epoxy : UL94V-O rate flame retardant Lead : Lead Formed for Surface Mount Polarity : Color band denotes cathode end Mounting position : Any Weight : 0.064 gram
2.0 ± 0.2
Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature u.
GN1A THRU GN1M, GN13 SURFACE MOUNT GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 50 to 1300 Volts Forward Curren.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | GN1010 |
Panasonic Semiconductor |
GaAs N-Channel MES IC | |
2 | GN1021 |
Matsushita |
GaAs N-Channel MES IC | |
3 | GN1022 |
Matsushita |
GaAs N Channel MES IC | |
4 | GN125 |
ELESA and GANTERGRIFF |
Adjustable handles | |
5 | GN13 |
GOOD-ARK Electronics |
SURFACE MOUNT GLASS PASSIVATED JUNCTION RECTIFIER | |
6 | GN13 |
EIC discrete Semiconductors |
GLASS PASSIVATED JUNCTION SILICON SURFACE MOUNT | |
7 | GN16 |
EIC |
HIGH VOLTAGE RECTIFIER | |
8 | GN1A4M |
NEC |
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR | |
9 | GN1A4P |
NEC |
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR | |
10 | GN1A4Z |
NEC |
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR | |
11 | GN1B |
GOOD-ARK Electronics |
SURFACE MOUNT GLASS PASSIVATED JUNCTION RECTIFIER | |
12 | GN1B |
EIC discrete Semiconductors |
GLASS PASSIVATED JUNCTION SILICON SURFACE MOUNT |