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GN1010 |
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| Part Number | GN1010 |
| Manufacturer | Panasonic Semiconductor |
| Description | GaAs MMICs GN1010 GN1010 GaAs N-Channel MES IC For high-output high-gain amplification 0.65±0.15 Unit : mm 2.8 –0.3 +0.2 +0.2 1.5 –0.3 0.65±0.15 s Features 0.95 q q q General-use wide-band amp... |
| Features |
0.95
q q q
General-use wide-band amplifier
2.9±0.2
0.5R
1.9±0.2
4
1
0.95
Low noise With bandwidth control pin
3
2
1.1 –0.1 s Absolute Maximum Ratings (Ta = 25˚C) Parameter Power supply voltage Drain current Gate current Allowable power dissipation Channel temperature Storage temperature Symbol VDS VGS ID IG PD Tch Tstg Rating 6 –4 45 3 200 150 – 55 to +150 Unit V V mA mA mW ˚C ˚C 1 : Source 2 : Drain 3:C 4 : Gate Mini Type Package (4-pin) s Equivalent Circuit 2 3 4 0 to 0.1 0.4±0.2 0.8 1 s Electrical Characteristics (Ta = 25˚C) Parameter Drain current Noise figure Power gain ... |
| Document |
 GN1010 Data Sheet
PDF 39.04KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | GN1021 |
Matsushita |
GaAs N-Channel MES IC |
|
| 2 | GN1022 |
Matsushita |
GaAs N Channel MES IC |
|
| 3 | GN125 |
ELESA and GANTERGRIFF |
Adjustable handles |
|
| 4 | GN13 |
GOOD-ARK Electronics |
SURFACE MOUNT GLASS PASSIVATED JUNCTION RECTIFIER |
|
| 5 | GN13 |
EIC discrete Semiconductors |
GLASS PASSIVATED JUNCTION SILICON SURFACE MOUNT |
|