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GaAs MMIC GN01096B GaAs IC (with built-in ferroelectric) Unit: mm 1.25±0.1 R0.2 1 0.65 2 0.65 3 0.425 • Super miniature S-Mini 6-pin package (2125 size) • Receiver amplifier : Low distortion with built-in gain control function 2.0±0.1 6 - 0° to 10° s Absolute Maximum Ratings Ta=25 °C Parameter Power supply voltage Circuit current Gate control voltage .
2.1±0.1 0.1 For low noise amplifier of cellular phone Other communication equipment 0.2±0.05 0.12 +0.05 −0.02 4 6 5 0.425 1 GN01096B s Measurement Circuit 1000 pF GaAs MMIC 1.4 pF 39 nH 100 pF RFOUT 0.5 pF 82 Ω 22 nH 100 pF 6 5 4 3 1 2 33 pF RFIN 27 nH 5.1 kΩ VAGC 12 pF 10 nF 2 .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | GN01094B |
Panasonic Semiconductor |
GaAs IC (with built-in ferroelectric) |
|
| 2 | GN01081B |
Panasonic Semiconductor |
GaAs IC with built-in ferroelectric |
|
| 3 | GN01100B |
Panasonic Semiconductor |
GaAs IC (with built-in ferroelectric) |
|
| 4 | GN02035B |
Panasonic Semiconductor |
GaAs IC(with built-in ferroelectric) |
|
| 5 | GN1010 |
Panasonic Semiconductor |
GaAs N-Channel MES IC |
|
| 6 | GN1021 |
Matsushita |
GaAs N-Channel MES IC |
|
| 7 | GN1022 |
Matsushita |
GaAs N Channel MES IC |
|
| 8 | GN125 |
ELESA and GANTERGRIFF |
Adjustable handles |
|
| 9 | GN13 |
GOOD-ARK Electronics |
SURFACE MOUNT GLASS PASSIVATED JUNCTION RECTIFIER |
|
| 10 | GN13 |
EIC discrete Semiconductors |
GLASS PASSIVATED JUNCTION SILICON SURFACE MOUNT |
|
| 11 | GN16 |
EIC |
HIGH VOLTAGE RECTIFIER |
|
| 12 | GN1A |
EIC discrete Semiconductors |
GLASS PASSIVATED JUNCTION SILICON SURFACE MOUNT |
|