GMBT8550 - GTM

GMBT8550 PNP EPITAXIAL TRANSISTOR

The GMBT8550 is designed for general purpose amplifier applications. Package Dimensions TPU.34)QBDLBHF* Absolute Maximum Ratings at Ta = 25к Parameter Symbol Junction Temperature Tj Storage Temperature Tstg Collector to Base Voltage VCBO Collector to Emitter Voltage VCEO Emitter to Base Voltage VEBO Collector Current IC Total Power Dissipati.

Features

s IC=-10uA IC=-1mA IE=-10uA VCB=-20V VEB=-6V IC=-500mA, IB=-50mA VCE=-1V, IC=-150mA VCE=-1V, IC=-150mA VCE=-10V, IC=-20mA, f=100MHz VCB=-10V, f=1MHz B9E 250 - 500 2/2 Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patent.