GMBT8050 - GTM

GMBT8050 NPN EPITAXIAL TRANSISTOR

The GMBT8050 is designed for general purpose amplifier applications. Package Dimensions ISSUED DATE :2002/11/21 REVISED DATE :2005/04/08B TPU.34)QBDLBHF* REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 - 0.85 1.15 0.

Features

IEBO - - 100 nA VEB=5V ,IC=0 VCE(sat) - - 500 mV IC=500mA, IB=50mA VBE(on) - - 1 V VCE=1V, IC=150mA hFE 120 - 500 VCE=1V, IC=150mA fT 150 - - MHz VCE=10V, IC=20mA, f=100MHz Cob - - 10 pF VCB=10V, f=1MHz Classification Of hFE Rank D9C hFE 120 ~ 200 D9D 150 ~ 300 D9E 250 ~ 500 1/2 Characteristics Curve ISSUED DATE :2002/11/21 REVISED DATE :2005/04/08B Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. .