GMBT5087 - GTM

GMBT5087 PNP EPITAXIAL PLANAR TRANSISTOR

The GMBT5087 is designed for low noise, high gain and general purpose amplifier applications. Package Dimensions TPU.34)QBDLBHF* Absolute Maximum Ratings at Ta = 25к Parameter Symbol Junction Temperature Tj Storage Temperature Tstg Collector to Base Voltage VCBO Collector to Emitter Voltage VCEO Emitter to Base Voltage VEBO Collector Current .

Features

BO1 - - -10 nA VCB=-10V, IE=0 ICBO2 - - -50 nA VCB=-35V, IE=0
*VCE(sat) - - -300 mV IC=-10mA, IB=-1mA
*VBE(sat) - - -850 mV IC=-10mA, IB=-1mA
*hFE1 250 - 800 VCE=-5V, IC=-0.1mA
*hFE2 250 - - VCE=-5V, IC=-1mA
*hFE3 250 - - VCE=-5V, IC=-10mA fT 40 - - MHz VCE=-5V, IC=-0.5mA, f=100MHz Cob - - 4.0 pF VCB=-5V, f=100kHz
* Pulse Test: Pulse WidthЉ380 s, Duty CycleЉ2% 1/2 Characteristics Curve ISSUED DATE :2005/06/28 REVISED DATE : Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written appro.