.
.
The GM72V66841ET/ELT is a synchronous dynamic random access memory comprised of 67,108,864 memory cells and logic includ.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | GM72V66841ELT |
Hynix Semiconductor |
2M x 8-Bit x 4 Bank SDRAM | |
2 | GM72V66841ELT |
LG Semicon |
2M x 8-Bit x 4 Bank SDRAM | |
3 | GM72V66841ET |
Hynix Semiconductor |
2M x 8-Bit x 4 Bank SDRAM | |
4 | GM72V66841ET |
LG Semicon |
2M x 8-Bit x 4 Bank SDRAM | |
5 | GM72V66841CLT |
LG Semicon |
2M x 8-Bit x 4 Bank SDRAM | |
6 | GM72V66841CT |
LG Semicon |
2M x 8-Bit x 4 Bank SDRAM | |
7 | GM72V661641D |
LG Semicon |
1M word x 16-Bit x 4 Bank SDRAM | |
8 | GM72V661641DI |
LG Semicon |
1M word x 16-Bit x 4 Bank SDRAM | |
9 | GM72V661641DI |
LG Semicon |
1M word x 16-Bit x 4 Bank SDRAM | |
10 | GM72V661641DLI |
LG Semicon |
1M word x 16-Bit x 4 Bank SDRAM | |
11 | GM72V661641DLI |
LG Semicon |
1M word x 16-Bit x 4 Bank SDRAM | |
12 | GM72V66441CT-10 |
LG Semicon |
4M x 4-Bit x 4 Bank SDRAM |