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GM72V66841Exx |
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| Part Number | GM72V66841Exx |
| Manufacturer | Hynix Semiconductor |
| Description | The GM72V66841ET/ELT is a synchronous dynamic random access memory comprised of 67,108,864 memory cells and logic including input and output circuits operating synchronously by referring to the positi... |
| Features |
* PC133/PC100/PC66 Compatible -7(143MHz)/-75(133MHz)/-8(125MHz) -7K(PC100,2-2-2)/-7J(PC100,3-2-2) * 3.3V single Power supply * LVTTL interface * Max Clock frequency 143/133/125/100MHz * 4,096 refresh cycle per 64 ms * Two kinds of refresh operation Auto refresh / Self refresh * Programmable burst access capability ; - Sequence:Sequential / Interleave - Length :1/2/4/8/FP * Programmable CAS latency : 2/3 * 4 Banks can operate independently or simultaneously * Burst read/burst write or burst read/single write operation capability * Input and output masking by DQM input * One Clock of back to bac... |
| Document |
 GM72V66841Exx Data Sheet
PDF 86.71KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | GM72V66841Exx |
LG Semicon |
2M x 8-Bit x 4 Bank SDRAM |
|
| 2 | GM72V66841ELT |
Hynix Semiconductor |
2M x 8-Bit x 4 Bank SDRAM |
|
| 3 | GM72V66841ELT |
LG Semicon |
2M x 8-Bit x 4 Bank SDRAM |
|
| 4 | GM72V66841ET |
Hynix Semiconductor |
2M x 8-Bit x 4 Bank SDRAM |
|
| 5 | GM72V66841ET |
LG Semicon |
2M x 8-Bit x 4 Bank SDRAM |
|