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The GM72V66841ET/ELT is a synchronous dynamic random access memory comprised of 67,108,864 memory cells and logic including input and output circuits operating synchronously by referring to the positive edge of the externally provided Clock. The GM72V66841ET/ELT provides four banks of 2,097,152 word by 8 bit to realize high bandwidth with the Clock frequency.
* PC133/PC100/PC66 Compatible -7(143MHz)/-75(133MHz)/-8(125MHz) -7K(PC100,2-2-2)/-7J(PC100,3-2-2)
* 3.3V single Power supply
* LVTTL interface
* Max Clock frequency
143/133/125/100MHz
* 4,096 refresh cycle per 64 ms
* Two kinds of refresh operation
Auto refresh / Self refresh
* Programmable burst access capability ;
- Sequence:Sequential / Interleave - Length :1/2/4/8/FP
* Programmable CAS latency : 2/3
* 4 Banks can operate independently or simultaneously
* Burst read/burst write or burst read/single write operation capability
* Input and output masking by DQM input
* One Clock of back to bac.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | GM72V66841ET |
Hynix Semiconductor |
2M x 8-Bit x 4 Bank SDRAM |
|
| 2 | GM72V66841ET |
LG Semicon |
2M x 8-Bit x 4 Bank SDRAM |
|
| 3 | GM72V66841Exx |
LG Semicon |
2M x 8-Bit x 4 Bank SDRAM |
|
| 4 | GM72V66841Exx |
Hynix Semiconductor |
2M x 8-Bit x 4 Bank SDRAM |
|
| 5 | GM72V66841CLT |
LG Semicon |
2M x 8-Bit x 4 Bank SDRAM |
|
| 6 | GM72V66841CT |
LG Semicon |
2M x 8-Bit x 4 Bank SDRAM |
|
| 7 | GM72V661641D |
LG Semicon |
1M word x 16-Bit x 4 Bank SDRAM |
|
| 8 | GM72V661641DI |
LG Semicon |
1M word x 16-Bit x 4 Bank SDRAM |
|
| 9 | GM72V661641DI |
LG Semicon |
1M word x 16-Bit x 4 Bank SDRAM |
|
| 10 | GM72V661641DLI |
LG Semicon |
1M word x 16-Bit x 4 Bank SDRAM |
|
| 11 | GM72V661641DLI |
LG Semicon |
1M word x 16-Bit x 4 Bank SDRAM |
|
| 12 | GM72V66441CT-10 |
LG Semicon |
4M x 4-Bit x 4 Bank SDRAM |
|
