GD10HF60KD |
Part Number | GD10HF60KD |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | This device utilizes the advanced PowerMESH™ process for the IGBT and the Turbo 2 Ultrafast high voltage technology for the diode. The combination results in a very good trade-off between conduction l... |
Features |
• Designed for automotive applications and AEC-Q101 qualified • Low on-voltage drop (VCE(sat)) • Low Cres / Cies ratio (no cross conduction susceptibility) • Switching losses include diode recovery energy • Short-circuit rated • Very soft Ultrafast recovery anti-parallel diode Figure 1. Internal schematic diagram Applications • High frequency inverters • SMPS and PFC in both hard switch and resonant topologies • Motor drives • Injection systems Description This device utilizes the advanced PowerMESH™ process for the IGBT and the Turbo 2 Ultrafast high voltage technology for the diode. The c... |
Document |
GD10HF60KD Data Sheet
PDF 724.43KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | GD103SD |
GTM |
SWITCHING DIODE | |
2 | GD10NC60HD |
STMicroelectronics |
very fast IGBT | |
3 | GD10NC60KD |
STMicroelectronics |
short-circuit rugged IGBT | |
4 | GD10NC60S |
STMicroelectronics |
fast IGBT | |
5 | GD10PJK120L1S |
STARPOWER |
IGBT |