G4PF50WD - International Rectifier

G4PF50WD IRG4PF50WD

PD- 91788 IRG4PF50WD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Optimized for use in Welding and Switch-Mode Power Supply applications • Industry benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter G • Low IGBT conduction losses • Latest technology IGBT d.

Features

• Optimized for use in Welding and Switch-Mode Power Supply applications
• Industry benchmark switching losses improve efficiency of all power supply topologies
• 50% reduction of Eoff parameter G
• Low IGBT conduction losses
• Latest technology IGBT design offers tighter parameter distribution coupled with exceptional reliability
• IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
• Industry standard TO-247AC package Benefits
• Lower switching losses allow more cost-effective operation and hence efficient replac.