PD -91656C IRG4PC40W INSULATED GATE BIPOLAR TRANSISTOR Features www.DataSheet4U.com C • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter • Low IGBT conduction losses • Latest-generation IGBT.
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• Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications
• Industry-benchmark switching losses improve efficiency of all power supply topologies
• 50% reduction of Eoff parameter
• Low IGBT conduction losses
• Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability
VCES = 600V
G E
VCE(on) typ. = 2.05V
@VGE = 15V, IC = 20A
n-channel
Benefits
• Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz ("hard switched" mode)
• Of particular be.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | G4PC40FD |
International Rectifier |
IRG4PC40FD | |
2 | G4PC40K |
International Rectifier |
IRG4PC40K | |
3 | G4PC40S |
IRF |
IRG4PC40S | |
4 | G4PC40U |
International Rectifier |
IRG4PC40U | |
5 | G4PC40UD |
International Rectifier |
IRG4PC40UD | |
6 | G4PC30F |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
7 | G4PC30KD |
International Rectifier |
IRG4PC30KD | |
8 | G4PC30S |
International Rectifier |
IRG4PC30S | |
9 | G4PC30U |
International Rectifier |
IRG4PC30U | |
10 | G4PC50F |
International Rectifier |
IRG4PC50F | |
11 | G4PC50K |
International Rectifier |
IRG4PC50K | |
12 | G4PC50U |
International Rectifier |
IRG4PC50U |