G4PC50F - International Rectifier

G4PC50F IRG4PC50F

PD 91468C INSULATED GATE BIPOLAR TRANSISTOR IRG4PC50F Fast Speed IGBT Features • Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package C G E n-channel VCES = 600V VCE.

Features

• Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).
• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
• Industry standard TO-247AC package C G E n-channel VCES = 600V VCE(on) typ. = 1.45V @VGE = 15V, IC = 39A Benefits
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's Absolute Maximum Ratings VCES IC @ TC = 25°C IC @ TC = 100°C .