G20N60HS - Infineon

G20N60HS High Speed IGBT

  IRFP3006PbF 60V 2.1m 2.5m 270A 195A G VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited)     D D G S S TO-247AC Applications  High Efficiency Synchronous Rectification in SMPS  Uninterruptible Power Supply  High Speed Power Switching  Hard Switched and High Frequency Circuits Benefits  Improved Gate, Avalanche and Dynamic dV/d.

Features

Maximum Power Dissipation PD @TC = 25°C Linear Derating Factor Gate-to-Source Voltage VGS Peak Diode Recovery  dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy  IAR Avalanche Current  EAR Repetitive Avalanche Energy  Thermal Resistance Symbol Parameter Junction-to-Case  RJC Case-to-Sink, Flat Greased Surface RCS Junction-to-Ambient RJA TJ TSTG 1 www.irf.com © 2013 International Rectifier -55 to + 175 10lbf
in (.