The HGTG20N120E2 is a MOS gated, high voltage switch- ing device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. IGBTs are ideal for many high.
• 34A, 1200V
• Latch Free Operation
• Typical Fall Time - 780ns
• High Input Impedance
• Low Conduction Loss
Description
The HGTG20N120E2 is a MOS gated, high voltage switch-
ing device combining the best features of MOSFETs and
bipolar transistors. The device has the high input impedance
of a MOSFET and the low on-state conduction loss of a
bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC.
IGBTs are ideal for many high voltage switching applications operating at frequencies where low conduction losses are essential, such as: AC and D.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | G20N100D2 |
Intersil Corporation |
HGTG20N100D2 | |
2 | G20N50C |
Vishay |
Power MOSFET | |
3 | G20N60B3 |
Intersil Corporation |
N-Channel IGBT | |
4 | G20N60B3D |
Fairchild |
40A / 600V / UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | |
5 | G20N60C3 |
Fairchild Semiconductor |
N-Channel IGBT | |
6 | G20N60C3D |
Intersil Corporation |
N-Channel IGBT | |
7 | G20N60HS |
Infineon |
High Speed IGBT | |
8 | G20-40i |
AEG |
Rectifier | |
9 | G200 |
Vishay |
Axial Vitreous Leaded Wirewound Resistors | |
10 | G2000HF250 |
IXYS |
Anode Shorted Gate Turn-Off Thyristor | |
11 | G2000HF450 |
IXYS |
Anode Shorted Gate Turn-Off Thyristor | |
12 | G2001 |
Global Mixed-mode Technology |
6+1CH serial input motor driver IC |