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G20N120 |
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| Part Number | G20N120 |
| Manufacturer | ETC |
| Description | The HGTG20N120E2 is a MOS gated, high voltage switch- ing device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-sta... |
| Features |
• 34A, 1200V • Latch Free Operation • Typical Fall Time - 780ns • High Input Impedance • Low Conduction Loss Description The HGTG20N120E2 is a MOS gated, high voltage switch- ing device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. IGBTs are ideal for many high voltage switching applications operating at frequencies where low conduction losses are essential, such as: AC and D... |
| Document |
 G20N120 Data Sheet
PDF 166.89KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | G20N100D2 |
Intersil Corporation |
HGTG20N100D2 |
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| 2 | G20N50C |
Vishay |
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| 3 | G20N60B3 |
Intersil Corporation |
N-Channel IGBT |
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| 4 | G20N60B3D |
Fairchild |
40A / 600V / UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
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| 5 | G20N60C3 |
Fairchild Semiconductor |
N-Channel IGBT |
|