MITSUBISHI Nch POWER MOSFET FS40SM-5 HIGH-SPEED SWITCHING USE FS40SM-5 OUTLINE DRAWING 15.9MAX. Dimensions in mm 4.5 1.5 r 2 2 4 20.0 φ 3.2 5.0 1.0 q 5.45 w e 5.45 19.5MIN. 4.4 0.6 2.8 4 wr q GATE w DRAIN e SOURCE r DRAIN e q ¡VDSS ..... 250V ¡rDS (ON) (MAX) .........
Typical value MITSUBISHI Nch POWER MOSFET FS40SM-5 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter (Tch = 25°C) Test conditions ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 250V, VGS = 0V ID = 1mA, VDS = 10V ID = 20A, VGS = 10V ID = 20A, VGS = 10V ID = 20A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz Limits Min. 250 ±30 — — 2 — — 12.0 — — — — — — — — — Typ. — — — — 3 0.066 1.32 18.0 2850 580 110 45 125 310 140 1.5 — Max. — — ±10 1.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FS50KMJ-03 |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET | |
2 | FS50KMJ-06 |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET | |
3 | FS50KMJ-2 |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET | |
4 | FS50KM-06 |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET | |
5 | FS50KM-2 |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET | |
6 | FS50KM-3 |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET | |
7 | FS50 |
Feeling Technology |
LINEAR HALL-EFFECT SENSORS | |
8 | FS500R17OE4D |
Infineon |
IGBT | |
9 | FS500R17OE4DP |
Infineon |
IGBT | |
10 | FS50AS-03 |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET | |
11 | FS50ASJ-03 |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET | |
12 | FS50ASJ-03F |
Renesas |
N-channel MOSFET |