FS50KM-3 - Mitsubishi Electric Semiconductor

FS50KM-3 Nch POWER MOSFET

MITSUBISHI Nch POWER MOSFET FS50AS-03 HIGH-SPEED SWITCHING USE FS50AS-03 OUTLINE DRAWING 6.5 5.0 ± 0.2 Dimensions in mm r 5.5 ± 0.2 1.5 ± 0.2 0.5 ± 0.1 1.0MAX. 2.3MIN. 10MAX. 1.0 A 0.5 ± 0.2 0.8 0.9MAX. 2.3 2.3 2.3 q w e wr q GATE w DRAIN e SOURCE r DRAIN e ¡10V DRIVE ¡VDSS ....

Features

re Storage temperature Weight Typical value VGS = 0V VDS = 0V Conditions Ratings 30 ±20 50 200 50 50 200 35
  –55 ~ +150
  –55 ~ +150 0.26 Unit V V A A A A A W °C °C g Feb.1999 L = 30µH MITSUBISHI Nch POWER MOSFET FS50AS-03 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) y fs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage (Tch = 25° C) Test conditions ID = 1mA, VGS = 0V VGS = ± 20V, VDS = 0V V.