FS50KMJ-2 - Mitsubishi Electric Semiconductor

FS50KMJ-2 Nch POWER MOSFET

MITSUBISHI Nch POWER MOSFET FS3VS-16A HIGH-SPEED SWITCHING USE FS3VS-16A OUTLINE DRAWING r Dimensions in mm 4.5 1.3 1.5MAX. 8.6 ± 0.3 9.8 ± 0.5 3.0 +0.3 –0.5 1.5MAX. 10.5MAX. 0 –0 +0.3 1 5 0.8 0.5 q w e wr 2.6 ± 0.4 q ¡VDSS ..... 800V ¡rDS (ON) (MAX) .....

Features

Unit V V A A W °C °C g Feb.1999 Typical value (1.5) MITSUBISHI Nch POWER MOSFET FS3VS-16A HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter (Tch = 25°C) Test conditions ID = 1mA, VGS = 0V IGS = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 800V, VGS = 0V ID = 1mA, VDS = 10V ID = 1.5A, VGS = 10V ID = 1.5A, VGS = 10V ID = 1.5A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz Limits Min. 800 ±30 — — 2 — — 2.1 — — — — — — — — — Typ. — — — — 3 2.53 3.80 3.5 770 77 1.